Wp3 - Design, fabrication and testing RF-MEMS and MiniMEMS circuits

The objectives of this WP are:

  • MEMS, MiniMEMS switches and phase shifters on GaN
- To fabricate GaN-based MEMS and MiniMEMS switches on different substrates for applications in the 2-20 GHz frequency range, according to the design solution identified in WP1.

- To characterize the fabricated MEMS and MiniMEMS on GaN.

  • MEMS , MiniMEMS switches and phase shifters on LCP

- To fabricate the RF-MEMS and MiniMEMS switches and phase shifters on LCP.
- To characterize the RF-MEMS and MiniMEMS switches and phase shifters on LCP.

  • MEMS, MiniMEMS switches and phase shifters on Si

- To fabricate the RF-MEMS and MiniMEMS phase shifters on silicon.
- To characterize the RF-MEMS and MiniMEMS phase shifters on silicon.

  • To make a choice between the different substrates for the fabrication of demonstrators
  • To develop all the necessary tools for characterization of the devices at the reduced dimension